DETERMINATION OF RECOMBINATION CENTER POSITION FROM THE TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN THE BASE REGION OF P-N-JUNCTION SOLAR-CELLS

被引：9

作者：

BHATTACHARYA, DK ^{[1
]}

MANSINGH, A ^{[1
]}

SWARUP, P ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI 110007,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2942 / 2947

页数：6

共 13 条

[1]

BALIGA BJ, 1981, APPLIED SOLID STATE, P142

[2] LIFETIME OF ELECTRONS IN P-TYPE SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1955, 100 (02) :523-524

[3] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[4] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J].

LEDERHANDLER, SR ;

GIACOLETTO, LJ .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04) :477-483

[5] TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER LIFETIME IN SINGLE-CRYSTAL AND POLYCRYSTALLINE SI SOLAR-CELLS [J].

MATHUR, PC ;

SHARMA, RP ;

SAXENA, P ;

ARORA, JD .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3651-3654

[6]

McKelvey J. P., 1966, SOLID STATE SEMICOND

[7]

MOORE AR, 1980, RCA REV, V40, P549

[8] REVERSE CURRENT AND CARRIER LIFETIME AS A FUNCTION OF TEMPERATURE IN SILICON JUNCTION DIODES [J].

PELL, EM ;

ROE, GM .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (07) :768-772

[9] REVERSE CURRENT AND CARRIER LIFETIME AS A FUNCTION OF TEMPERATURE IN GERMANIUM JUNCTION DIODES [J].

PELL, EM .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :658-665

[10] THEORY AND EXPERIMENTS ON OPEN CIRCUIT VOLTAGE DECAY OF P-N-JUNCTION DIODES WITH ARBITRARY BASE WIDTH, INCLUDING THE EFFECTS OF BUILT-IN DRIFT FIELD IN THE BASE AND RECOMBINATIONS IN THE EMITTER [J].

RAY, UC ;

AGARWAL, SK ;

JAIN, SC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :9122-9129

← 1 2 →