THEORY OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF AN INGAASP LASER

被引：19

作者：

HAUG, A

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期

关键词：

D O I：

10.1109/JQE.1985.1072700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：716 / 718

页数：3

共 17 条

[1] EFFECT OF AUGER RECOMBINATION ON THE THRESHOLD CHARACTERISTICS OF GAIN-GUIDED INGAASP LASERS [J].

AGRAWAL, GP ;

DUTTA, NK .

ELECTRONICS LETTERS, 1983, 19 (23) :974-976

[2] THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS [J].

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :917-923

[3] THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].

ASADA, M ;

ADAMS, AR ;

STUBKJAER, KE ;

SUEMATSU, Y ;

ITAYA, Y ;

ARAI, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :611-619

[4]

DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380

[5] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].

DUTTA, NK ;

NELSON, RJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92

[6] EVIDENCE OF THE IMPORTANCE OF AUGER RECOMBINATION FOR INGAASP LASERS [J].

HAUG, A .

ELECTRONICS LETTERS, 1984, 20 (02) :85-86

[7] AUGER RECOMBINATION IN INGAASP [J].

HAUG, A .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :512-514

[8] THE EFFECT OF INTERVALENCE BAND ABSORPTION ON THE THERMAL-BEHAVIOR OF INGAASP LASERS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR ;

LUONGO, JP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :947-952

[9]

HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997

[10]

Horikoshi Y., 1982, GaInAsP alloy semiconductors, P379

← 1 2 →