INVESTIGATION OF THE CHARGING EFFECT ON THIN SIO2 LAYERS WITH THE ELECTRON-BEAM LITHOGRAPHY SYSTEM

被引：19
|
作者：
ITOH, H [1 ]
NAKAMURA, K [1 ]
HAYAKAWA, H [1 ]
机构：
[1] HITACHI LTD,CTR DEVICE DEV,OHME 198,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词：
D O I：
10.1116/1.584527
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1532 / 1535
页数：4
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