COMPARISON OF MINORITY-CARRIER DIFFUSION LENGTH MEASUREMENTS IN SILICON BY THE PHOTOCONDUCTIVE DECAY AND SURFACE PHOTOVOLTAGE METHODS

被引：34

作者：

SARITAS, M ^{[1
]}

MCKELL, HD ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.340155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4561 / 4567

页数：7

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