GROWTH AND TRANSPORT-PROPERTIES OF INAS EPILAYERS ON GAAS

被引：29

作者：

KALEM, S ^{[1
]}

CHYI, JI ^{[1
]}

MORKOC, H ^{[1
]}

BEAN, R ^{[1
]}

ZANIO, K ^{[1
]}

机构：

[1] FORD AEROSP & COMMUN CORP,NEWPORT BEACH,CA 92660

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.99938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1647 / 1649

页数：3

共 23 条

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[2]

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[7] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

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[8] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].

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[9]

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[10] SURFACE PROCESSES CONTROLLING GROWTH OF GAXIN1-XAS AND GAXIN1-XP ALLOY-FILMS BY MBE [J].

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