SIDEWALL GATE CONTROLLED DIODE FOR THE MEASUREMENT OF SILICON SELECTIVE EPITAXIAL GROWTH-SIO2 INTERFACE DEFECTS

被引：6
|
作者：
KLAASEN, WA
NEUDECK, GW
机构：
[1] School of Engineering, Purdue University, West, Lafayette, IN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 01期
关键词：
D O I：
10.1109/16.43825
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The sidewall gate controlled diode (SGCD) was fabricated as a new device structure for the measurement and evaluation of electrical defects near the unique vertical silicon-SiO2 sidewall interface associated with low-temperature low-pressure silicon selective epitaxial growth (SEG) technologies. SGCD devices were fabricated and tested to demonstrate their value for measuring the SEG sidewall interface and near interface electrical characteristics. © 1990 IEEE
引用
收藏
页码：273 / 279
页数：7
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