FIELD-EFFECT ANALYSIS FOR THE DETERMINATION OF GAP-STATE DENSITY AND FERMI-LEVEL TEMPERATURE-DEPENDENCE IN POLYCRYSTALLINE SILICON

被引：89

作者：

FORTUNATO, G

MEAKIN, DB

MIGLIORATO, P

LECOMBER, PG

机构：

[1] CNR,IST ELETTRON STATO SOLIDO,I-00156 ROMA,ITALY

[2] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1988年 / 57卷 / 05期

关键词：

D O I：

10.1080/13642818808211229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：573 / 586

页数：14

共 19 条

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[3]

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[7] ENERGY-DISTRIBUTION OF TRAPPING STATES IN POLYCRYSTALLINE SILICON [J].

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[8] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

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[9]

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[10]

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