HYDROGEN CONTENT AND ANNEALING OF MEMORY QUALITY SILICON-OXYNITRIDE FILMS

被引：44

作者：

STEIN, HJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 02期

关键词：

D O I：

10.1007/BF02652901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：161 / 177

页数：17

共 20 条

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MACKENNA, EL ;

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[4] A LOW-STRESS INSULATING FILM ON SILICON BY CHEMICAL VAPOR DEPOSITION [J].

DRUM, CM ;

RAND, MJ .

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[5]

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[8] STRUCTURAL PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE [J].

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METALLURGICAL TRANSACTIONS, 1970, 1 (03) :735-&

[9]

MAGUIRE HG, 1972, J ELECTROCHEM SOC, V19, P791

[10]

MILEK JT, 1971, HDB ELECTRONIC MATER, V3

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