PIEZORESISTANCE OF IRRADIATED N-TYPE GE EXHIBITING LAYER INHOMOGENEITIES

被引:0
作者
SEMENYUK, AK
FEDOSOV, AV
NAZARCHUK, PF
BUKALO, VR
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:821 / 822
页数:2
相关论文
共 50 条
[21]   PIEZORESISTANCE IN N-TYPE GERMANIUM AT LOW TEMPERATURES [J].
SUGIYAMA, K ;
KOBAYASHI, A .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (03) :574-&
[22]   PIEZORESISTANCE MEASUREMENTS ON N-TYPE LEAD SULPHIDE [J].
FINLAYSON, DM ;
STEWART, AD .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (06) :737-+
[23]   PIEZORESISTANCE IN HEAVILY DOPED N-TYPE GERMANIUM [J].
POLLAK, M .
PHYSICAL REVIEW LETTERS, 1958, 1 (01) :44-44
[24]   TEMPERATURE DEPENDENCE OF PIEZORESISTANCE OF N-TYPE GASB [J].
YEE, SS ;
KALKBRENNER, FW .
PHYSICA STATUS SOLIDI, 1969, 36 (01) :K41-+
[25]   PIEZORESISTANCE AND MAGNETORESISTANCE OF UNIAXIALLY DEFORMED N-TYPE SILICON [J].
ORAZGULYEV, B ;
TARASOVA, VM .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06) :779-780
[26]   PIEZORESISTANCE COEFFICIENTS OF N-TYPE ALPHA-SIC [J].
RAPATSKA.IV ;
RUDASHEV.GE ;
KASAGANO.MG ;
IGLITSIN, MI ;
REIFMAN, MB ;
FEDOTOVA, EF .
SOVIET PHYSICS SOLID STATE,USSR, 1968, 9 (12) :2833-+
[27]   ANNEALING PROCESSES IN N-TYPE GE IRRADIATED WITH HIGH-ENERGY PROTONS [J].
KONOPLEVA, RF ;
NOVIKOV, SR ;
RUBINOVA, EE ;
SADIKOV, VP ;
UKHIN, NA .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08) :1296-+
[28]   NONLINEARITY OF PIEZORESISTANCE EFFECT IN P-TYPE AND N-TYPE SILICON [J].
MATSUDA, K ;
KANDA, Y ;
YAMAMURA, K ;
SUZUKI, K .
SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) :45-48
[29]   CARRIER-DENSITY DEPENDENCE OF MAGNETO-PIEZORESISTANCE OF N-TYPE GE UNDER MIXED SCATTERING CONDITIONS [J].
BARANSKII, PI ;
BUDA, IS ;
DAKHOVSKII, IV ;
KOLOMOETS, VV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01) :142-143
[30]   PIEZORESISTANCE AND MAGNETORESISTANCE OF UNIAXIALLY DEFORMED n-TYPE SILICON. [J].
Orazgulyev, B. ;
Tarasova, V.M. .
1600, (08)