POINT-DEFECTS AND PRODUCTION MECHANISMS IN SIO2

被引:0
|
作者
FOWLER, WB
机构
来源
SEMICONDUCTORS AND INSULATORS | 1983年 / 5卷 / 3-4期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:583 / 598
页数:16
相关论文
共 50 条
  • [21] POINT-DEFECTS IN MAGNETITE
    FLEET, ME
    JOURNAL OF THE CANADIAN CERAMIC SOCIETY, 1982, 51 : 13 - 15
  • [22] POINT-DEFECTS IN MOLYBDENUM
    KENNY, PN
    HEALD, PT
    PHILOSOPHICAL MAGAZINE, 1974, 29 (05): : 1137 - 1147
  • [23] POINT-DEFECTS IN METALS
    KOVACS, I
    ELSAYED, H
    JOURNAL OF MATERIALS SCIENCE, 1976, 11 (03) : 529 - 559
  • [24] POINT-DEFECTS IN FEAL
    HO, K
    DODD, RA
    SCRIPTA METALLURGICA, 1978, 12 (11): : 1055 - 1058
  • [25] NUCLEATION ON POINT-DEFECTS
    STOYANOV, S
    JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 293 - 297
  • [26] POINT-DEFECTS IN METALS
    QUERE, Y
    JOURNAL DE MICROSCOPIE, 1973, 16 (02): : 111 - 124
  • [27] POINT-DEFECTS IN GAAS
    WEBER, ER
    KHACHATURYAN, K
    HOINKIS, M
    KAMINSKA, M
    POINT AND EXTENDED DEFECTS IN SEMICONDUCTORS, 1989, 202 : 39 - 50
  • [28] POINT-DEFECTS AND THEIR INTERACTION
    WAGNER, C
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 1 - 22
  • [29] POINT-DEFECTS IN MOTION
    KOSSECKA, E
    BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES TECHNIQUES, 1974, 22 (06): : 467 - 472
  • [30] ROLE OF POINT-DEFECTS IN DIELECTRIC-BREAKDOWN OF SIO2 FORMED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF TETRAETHOXYSILANE
    ISHII, K
    ISSHIKI, D
    OHKI, Y
    NISHIKAWA, H
    TAKIYAMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01): : 205 - 211