GAS CLUSTER ION-BEAM EQUIPMENTS FOR INDUSTRIAL APPLICATIONS

被引:25
作者
MATSUO, J [1 ]
ABE, H [1 ]
TAKAOKA, GH [1 ]
YAMADA, I [1 ]
机构
[1] AYUMI IND CO LTD,HIMEJI,HYOGO 67102,JAPAN
关键词
D O I
10.1016/0168-583X(95)00338-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
30 keV and 200 keV gas cluster ion beam equipments have been developed for industrial applications. A gas cluster source with a non-cooled nozzle was used for both the equipments. Sufficient monomer ion suppression was achieved by using an E X B filter and chromatic lenses mass filter with low extraction voltage. These equipments are suitable to be used for low-damage surface treatment of metals, insulators and semiconductors without heavy metal contamination.
引用
收藏
页码:244 / 247
页数:4
相关论文
共 12 条
[1]  
AKIZUKI M, P ICSSPIC, V7
[2]   LARGER CLUSTER ION IMPACT PHENOMENA [J].
BEUHLER, R ;
FRIEDMAN, L .
CHEMICAL REVIEWS, 1986, 86 (03) :521-537
[3]   MAGIC NUMBERS IN MASS-SPECTRA OF LARGE VANDERWAALS CLUSTERS [J].
ECHT, O ;
KANDLER, O ;
LEISNER, T ;
MIEHLE, W ;
RECKNAGEL, E .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1990, 86 (13) :2411-2415
[4]   MANY-BODY EMBEDDED-ATOM POTENTIAL FOR DESCRIBING THE ENERGY AND ANGULAR-DISTRIBUTIONS OF RH ATOMS DESORBED FROM ION-BOMBARDED RH(111) [J].
GARRISON, BJ ;
WINOGRAD, N ;
DEAVEN, DM ;
REIMANN, CT ;
LO, DY ;
TOMBRELLO, TA ;
HARRISON, DE ;
SHAPIRO, MH .
PHYSICAL REVIEW B, 1988, 37 (13) :7197-7204
[5]  
GSPANN J, 1994, LASER ION BEAM MODIF, P107
[6]   MOLECULAR-DYNAMICS SIMULATIONS OF COLLISIONS BETWEEN ENERGETIC CLUSTERS OF ATOMS AND METAL SUBSTRATES [J].
HSIEH, H ;
AVERBACK, RS ;
SELLERS, H ;
FLYNN, CP .
PHYSICAL REVIEW B, 1992, 45 (08) :4417-4430
[7]  
INSEPOV Z, 1994, LASER ION BEAM MODIF, P111
[8]  
MATSUO J, P ICSSPIC, V7
[9]   MASS-SPECTROMETRIC EVIDENCE FOR ICOSAHEDRAL STRUCTURE IN LARGE RARE-GAS CLUSTERS - AR, KR, XE [J].
MIEHLE, W ;
KANDLER, O ;
LEISNER, T ;
ECHT, O .
JOURNAL OF CHEMICAL PHYSICS, 1989, 91 (10) :5940-5952
[10]   RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+ [J].
TSAI, MY ;
STREETMAN, BG .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :183-187