GAS CLUSTER ION-BEAM EQUIPMENTS FOR INDUSTRIAL APPLICATIONS

被引:25
作者
MATSUO, J [1 ]
ABE, H [1 ]
TAKAOKA, GH [1 ]
YAMADA, I [1 ]
机构
[1] AYUMI IND CO LTD,HIMEJI,HYOGO 67102,JAPAN
关键词
D O I
10.1016/0168-583X(95)00338-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
30 keV and 200 keV gas cluster ion beam equipments have been developed for industrial applications. A gas cluster source with a non-cooled nozzle was used for both the equipments. Sufficient monomer ion suppression was achieved by using an E X B filter and chromatic lenses mass filter with low extraction voltage. These equipments are suitable to be used for low-damage surface treatment of metals, insulators and semiconductors without heavy metal contamination.
引用
收藏
页码:244 / 247
页数:4
相关论文
共 12 条
  • [1] AKIZUKI M, P ICSSPIC, V7
  • [2] LARGER CLUSTER ION IMPACT PHENOMENA
    BEUHLER, R
    FRIEDMAN, L
    [J]. CHEMICAL REVIEWS, 1986, 86 (03) : 521 - 537
  • [3] MAGIC NUMBERS IN MASS-SPECTRA OF LARGE VANDERWAALS CLUSTERS
    ECHT, O
    KANDLER, O
    LEISNER, T
    MIEHLE, W
    RECKNAGEL, E
    [J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1990, 86 (13): : 2411 - 2415
  • [4] MANY-BODY EMBEDDED-ATOM POTENTIAL FOR DESCRIBING THE ENERGY AND ANGULAR-DISTRIBUTIONS OF RH ATOMS DESORBED FROM ION-BOMBARDED RH(111)
    GARRISON, BJ
    WINOGRAD, N
    DEAVEN, DM
    REIMANN, CT
    LO, DY
    TOMBRELLO, TA
    HARRISON, DE
    SHAPIRO, MH
    [J]. PHYSICAL REVIEW B, 1988, 37 (13): : 7197 - 7204
  • [5] GSPANN J, 1994, LASER ION BEAM MODIF, P107
  • [6] MOLECULAR-DYNAMICS SIMULATIONS OF COLLISIONS BETWEEN ENERGETIC CLUSTERS OF ATOMS AND METAL SUBSTRATES
    HSIEH, H
    AVERBACK, RS
    SELLERS, H
    FLYNN, CP
    [J]. PHYSICAL REVIEW B, 1992, 45 (08): : 4417 - 4430
  • [7] INSEPOV Z, 1994, LASER ION BEAM MODIF, P111
  • [8] MATSUO J, P ICSSPIC, V7
  • [9] MASS-SPECTROMETRIC EVIDENCE FOR ICOSAHEDRAL STRUCTURE IN LARGE RARE-GAS CLUSTERS - AR, KR, XE
    MIEHLE, W
    KANDLER, O
    LEISNER, T
    ECHT, O
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1989, 91 (10) : 5940 - 5952
  • [10] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+
    TSAI, MY
    STREETMAN, BG
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 183 - 187