MEASUREMENT OF INTRINSIC STRESSES DURING GROWTH OF ALUMINUM NITRIDE THIN-FILMS BY REACTIVE SPUTTER-DEPOSITION

被引：44
|
作者：
MENG, WJ
SELL, JA
EESLEY, GL
PERRY, TA
机构：
[1] Physics Department, General Motors Research and Development Center, Warren
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期
关键词：
D O I：
10.1063/1.354701
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Real-time measurements of intrinsic stresses during growth of polycrystalline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room-temperature measurements on polycrystalline films corroborate previous post-growth measurements. Our high-temperature measurements provide evidence of large intrinsic stresses during epitaxial growth of AlN on Si(111) and insignificant stress relaxation during growth.
引用
收藏
页码：2411 / 2414
页数：4
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