MEASUREMENT OF INTRINSIC STRESSES DURING GROWTH OF ALUMINUM NITRIDE THIN-FILMS BY REACTIVE SPUTTER-DEPOSITION

被引：44

作者：

MENG, WJ

SELL, JA

EESLEY, GL

PERRY, TA

机构：

[1] Physics Department, General Motors Research and Development Center, Warren

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.354701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Real-time measurements of intrinsic stresses during growth of polycrystalline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room-temperature measurements on polycrystalline films corroborate previous post-growth measurements. Our high-temperature measurements provide evidence of large intrinsic stresses during epitaxial growth of AlN on Si(111) and insignificant stress relaxation during growth.

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页码：2411 / 2414

页数：4

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