THE FUNDAMENTAL ABSORPTION-EDGE IN BI12SIO20

被引：14

作者：

TOYODA, T

MARUYAMA, S

NAKANISHI, H

ENDO, S

IRIE, T

机构：

[1] FUJI ELECT CORP RES & DEV LTD,YUKOSUKA CITY 24001,JAPAN

[2] SCI UNIV TOKYO,FAC SCI & TECHNOL,DEPT ELECT ENGN,NODA,CHIBA 278,JAPAN

[3] SCI UNIV TOKYO,FAC ENGN,DEPT ELECT ENGN,SHINJUKU KU,TOKYO 162,JAPAN

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1986年 / 19卷 / 05期

关键词：

D O I：

10.1088/0022-3727/19/5/023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：909 / 915

页数：7

共 15 条

[1] ELECTRICAL AND OPTICAL PROPERTIES OF BI12SIO20
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HOU, SL
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[2] GROWTH OF SINGLE CRYSTALLINE WAVEGUIDING THIN-FILMS OF PIEZOELECTRIC SILLENITES
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BROWN, H
TIEN, PK
MARTIN, RJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1973, 20 (03) : 251 - 255
[3] Cockayne B., 1968, Journal of Crystal Growth, V3-4Spe, P60, DOI 10.1016/0022-0248(68)90101-2
[4] OPTICAL ACTIVITY AND FARADAY ROTATION IN BISMUTH OXIDE COMPOUNDS
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BROWER, WS
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[J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 201 - &
[5] TRANSPORT PROCESSES OF PHOTOINDUCED CARRIERS IN BI12SIO20
HOU, SL
LAUER, RB
ALDRICH, RE
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2652 - 2658
[6] POCKELS READOUT OPTICAL MEMORY USING BI12SIO20
HOU, SL
OLIVER, DS
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 325 - &
[7] HIGH-SENSITIVITY READ-WRITE VOLUME HOLOGRAPHIC STORAGE IN BI12SIO20 AND BI12GEO20 CRYSTALS
HUIGNARD, JP
MICHERON, F
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (09) : 591 - 593
[8] THERMALLY STIMULATED CURRENTS AND LUMINESCENCE IN BI12SIO20 AND BI12GEO20
LAUER, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2147 - &
[9] PHOTOLUMINESCENCE IN BI12SIO20 AND BI12GEO20
LAUER, RB
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (04) : 178 - &
[10] POLYMORPHISM OF BISMUTH SESQUIOXIDE .2. EFFECT OF OXIDE ADDITIONS ON POLYMORPHISM OF BI2O3
LEVIN, EM
ROTH, RS
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1964, A 68 (02): : 197 - +

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