CHARACTERIZATION OF HETEROJUNCTION PARAMETERS BY SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY

被引:13
作者
MARGARITONDO, G [1 ]
机构
[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期
关键词
D O I
10.1116/1.573325
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:829 / 834
页数:6
相关论文
共 54 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[3]   SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J].
BAUER, RS ;
MIKKELSEN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :491-497
[4]   GE-GAAS(110) INTERFACE FORMATION [J].
BAUER, RS ;
MCMENAMIN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449
[5]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[6]   INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J].
CHIARADIA, P ;
KATNANI, AD ;
SANG, HW ;
BAUER, RS .
PHYSICAL REVIEW LETTERS, 1984, 52 (14) :1246-1249
[7]  
COHEN ML, 1980, ADV ELECTRON EL PHYS, V51, P1
[8]  
DANIELS RR, 1985, J VAC SCI TECHNOL A, V3, P203
[9]   ELECTRONIC-STRUCTURE IN GAAS-GE THROUGH ANGLE-RESOLVED PHOTOEMISSION [J].
DENLEY, D ;
MILLS, KA ;
PERFETTI, P ;
SHIRLEY, DA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1501-1503
[10]   PHOTOEMISSION-STUDIES OF A-SIXC1-X-H/A-SI AND A-SIXC1-X-H/HYDROGENATED AMORPHOUS-SILICON HETEROJUNCTIONS [J].
EVANGELISTI, F ;
FIORINI, P ;
GIOVANNELLA, C ;
PATELLA, F ;
PERFETTI, P ;
QUARESIMA, C ;
CAPOZI, M .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :764-766