ELECTRON-TRANSPORT IN ZNS

Transport characteristics of N-ZnS are calculated by solving the Boltzmann transport equation using a variational method (including all major scattering mechanisms and screening). The dependence of electron mobility on carrier concentration, for a range of compensation ratio and ionized impurity concentration, are given at both 300 and 77 K. This provides a rapid means for determining material quality. Mobility limits of 230 cm2/V s (n∼1019 cm-3) and over 3000 cm2/V s (n<1014 cm-3) are calculated at 300 and 77 K, respectively. The temperature dependence of the mobility is calculated and agrees favorably with experimental data.