THE EFFECT OF TI-W BARRIER METAL ON CHARACTERISTICS OF PALLADIUM-SILICIDE SCHOTTKY-BARRIER DIODES

被引：3

作者：

DROBNY, VF

机构：

来源：

关键词：

D O I：

10.1007/BF02661223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：283 / 296

页数：14

共 12 条

[1] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
LEPSELTER, MP
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1011 - +
[2] Berezhnoi AS, 1960, SILICON ITS BINARY S
[3] RELATIONSHIP BETWEEN JUNCTION RADIUS AND REVERSE LEAKAGE OF SILICIDE SCHOTTKY-BARRIER DIODES
DROBNY, VF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 895 - 899
[4] DROBNY VF, 1984, JUN EL MAT C SANT BA
[5] SILICIDE FORMATION AT LOW-TEMPERATURES BY METAL-SIO2 INTERACTION
KRAUTLE, H
NICOLET, MA
MAYER, JW
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01): : K33 - K36
[6] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES
KRAUTLE, H
NICOLET, MA
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3304 - 3308
[7] Krautle H., 1974, APPL ION BEAMS METAL, P193
[8] REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES
PRETORIUS, R
HARRIS, JM
NICOLET, MA
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (04) : 667 - &
[9] RHODERICK EH, 1980, METAL SEMICONDUCTOR, P96
[10] Sze S. M., 1981, PHYSICS SEMICONDUCTO, p[279, 245]