THE EFFECT OF TI-W BARRIER METAL ON CHARACTERISTICS OF PALLADIUM-SILICIDE SCHOTTKY-BARRIER DIODES

被引：3
作者：
DROBNY, VF
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 03期
关键词：
D O I：
10.1007/BF02661223
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：283 / 296
页数：14
相关论文
共 12 条
[1]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+
[2]  
Berezhnoi AS, 1960, SILICON ITS BINARY S
[3]   RELATIONSHIP BETWEEN JUNCTION RADIUS AND REVERSE LEAKAGE OF SILICIDE SCHOTTKY-BARRIER DIODES [J].
DROBNY, VF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) :895-899
[4]  
DROBNY VF, 1984, JUN EL MAT C SANT BA
[5]   SILICIDE FORMATION AT LOW-TEMPERATURES BY METAL-SIO2 INTERACTION [J].
KRAUTLE, H ;
NICOLET, MA ;
MAYER, JW .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01) :K33-K36
[6]   KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J].
KRAUTLE, H ;
NICOLET, MA ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3304-3308
[7]  
Krautle H., 1974, APPL ION BEAMS METAL, P193
[8]   REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES [J].
PRETORIUS, R ;
HARRIS, JM ;
NICOLET, MA .
SOLID-STATE ELECTRONICS, 1978, 21 (04) :667-&
[9]  
RHODERICK EH, 1980, METAL SEMICONDUCTOR, P96
[10]  
Sze S. M., 1981, PHYSICS SEMICONDUCTO, p[279, 245]
12