THE EFFECT OF HYDROGEN PLASMA ON THE LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB

被引：13
作者：
OHSHIMA, T
YAMAUCHI, S
HARIU, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 01期
关键词：
D O I：
10.1143/JJAP.28.L13
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L13 / L15
页数：3
相关论文
共 50 条
  • [41] EPITAXIAL-GROWTH OF SILICON BY PLASMA CHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 250-DEGREES-C
    NAGAMINE, K
    YAMADA, A
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L951 - L953
  • [42] EPITAXIAL-GROWTH OF INSB ON SAPPHIRE BY RF-SPUTTERING
    MIYAZAKI, T
    MORI, M
    ADACHI, S
    APPLIED PHYSICS LETTERS, 1991, 58 (02) : 116 - 118
  • [43] HYDROGEN SURFACE COVERAGE - RAISING THE SILICON EPITAXIAL-GROWTH TEMPERATURE
    WOLFF, SH
    WAGNER, S
    BEAN, JC
    HULL, R
    GIBSON, JM
    APPLIED PHYSICS LETTERS, 1989, 55 (19) : 2017 - 2019
  • [44] Plasma etch effects on low-temperature selective epitaxial growth of silicon
    1600, (71):
  • [45] PLASMA-ASSISTED EPITAXIAL-GROWTH OF GAAS AND GASB LAYERS IN HYDROGEN PLASMA
    MATSUSHITA, K
    SATO, T
    SATO, Y
    SUGIYAMA, Y
    HARIU, T
    SHIBATA, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1092 - 1096
  • [46] PLASMA-CRACKING OF GROUP-V MOLECULES FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF III-V SEMICONDUCTOR LAYERS
    HARIU, T
    FANG, SF
    OHSHIMA, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 137 - 142
  • [47] CRYSTALLINITY IMPROVEMENT BY SYNCHROTRON RADIATION IRRADIATION IN LOW-TEMPERATURE SI EPITAXIAL-GROWTH USING DISILANE
    UTSUMI, Y
    TAKAHASHI, J
    AKAZAWA, H
    URISU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B): : 3195 - 3198
  • [48] LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH OF DYBACUO SUPERCONDUCTING THIN-FILMS
    MAMUTIN, VV
    KARTENKO, NF
    GOLOSCHAPOV, SI
    TRETJAKOV, VV
    KOPEV, PS
    APPLIED PHYSICS LETTERS, 1994, 64 (15) : 2031 - 2033
  • [49] LOW-TEMPERATURE LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF ALXGA1-XAS
    CHAKRAVARTY, S
    ARORA, BM
    SRIVASTAVA, AK
    SUBRAMANIAN, S
    ANAND, S
    THIN SOLID FILMS, 1988, 163 : 443 - 446
  • [50] LOW-TEMPERATURE EPITAXIAL-GROWTH OF ZN CHALCOGENIDES ON GAAS(001) BY POSTHEATED MOLECULAR-BEAMS
    YONETA, M
    HAMASAKI, T
    OHISHI, M
    SAITO, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 878 - 880
12345