FORMATION OF THIN-FILMS OF NISI - METASTABLE STRUCTURE, DIFFUSION MECHANISMS IN INTERMETALLIC COMPOUNDS

被引：229
作者：
DHEURLE, F
PETERSSON, CS
BAGLIN, JEE
LAPLACA, SJ
WONG, CY
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期
关键词：
D O I：
10.1063/1.333021
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：4208 / 4218
页数：11
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共 47 条
[1]  
ADDA Y, 1966, DIFFUSION SOLIDES, V1, P485
[2]   FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J].
ANDREWS, JM ;
KOCH, FB .
SOLID-STATE ELECTRONICS, 1971, 14 (10) :901-&
[3]   OBSERVATIONS OF STRESSES IN THIN-FILMS OF PALLADIUM AND PLATINUM SILICIDES ON SILICON [J].
ANGILELLO, J ;
HEURLE, FD ;
PETERSON, S ;
SEGMULLER, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :471-475
[4]  
ANGILELLO J, 1980, THIN FILM INTERFACES, P369
[5]   RADIOACTIVE N NI-STAR TRACER STUDY OF THE NICKEL SILICIDE GROWTH-MECHANISM [J].
BAGLIN, JEE ;
ATWATER, HA ;
GUPTA, D ;
DHEURLE, FM .
THIN SOLID FILMS, 1982, 93 (3-4) :255-264
[6]  
Baglin JEE, 1980, THIN FILM INTERFACES, P341
[7]   MARKER EXPERIMENTS FOR DIFFUSION IN THE SILICIDE DURING OXIDATION OF PDSI, PD2SI, COSI2, AND NISI2 FILMS ON [SI] [J].
BARTUR, M ;
NICOLET, MA .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5404-5405
[8]  
BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4
[9]   PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2 [J].
CHABAL, YJ ;
HAMANN, DR ;
ROWE, JE ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 25 (12) :7598-7602
[10]   SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES [J].
COE, DJ ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) :965-972
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