CDTE HOMOJUNCTION BY EPITAXIC GROWTH IN VAPOR-PHASE

被引：11

作者：

MIMILAARROYO, J ^{[1
]}

BOUAZZI, A ^{[1
]}

COHENSOLAL, G ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92190 BELLEVUE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1977年 / 12卷 / 02期

关键词：

D O I：

10.1051/rphysap:01977001202042300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：423 / 426

页数：4

共 13 条

[1]

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COHENSOLAL, G ;

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[4]

COHENSOLAL G, 1972, 9TH PHOT SPEC C WASH

[5]

FAHRENBRUCH AL, 1975, 11TH PHOT SPEC C PHE

[6]

KIREEV P, 1975, PHYSIQUE SEMICONDUCT, P597

[7] PHOTOVOLTAIC EFFECTS IN GRADED BANDGAP STRUCTURES [J].

MARFAING, Y ;

CHEVALLIER, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (08) :465-+

[8]

MARFAING Y, 1971, INT C SOLAR CELLS, P155

[9] CORRELATION FOR III-V SEMICONDUCTORS AND II-VI-SEMICONDUCTORS OF AU SCHOTTKY-BARRIER ENERGY WITH ANION ELECTRONEGATIVITY [J].

MCCALDIN, JO ;

MCGILL, TC ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1976, 36 (01) :56-58

[10] THE USE OF CLOSE SPACING IN CHEMICAL-TRANSPORT SYSTEMS FOR GROWING EPITAXIAL LAYERS OF SEMICONDUCTORS [J].

NICOLL, FH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) :1165-1167

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