STATIC CHARGE FLUCTUATIONS IN AMORPHOUS-SILICON

被引:116
作者
LEY, L
REICHARDT, J
JOHNSON, RL
机构
关键词
D O I
10.1103/PhysRevLett.49.1664
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:1664 / 1667
页数:4
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共 12 条
[1]   ANOMALOUS LOW-TEMPERATURE THERMAL PROPERTIES OF GLASSES AND SPIN GLASSES [J].
ANDERSON, PW ;
HALPERIN, BI ;
VARMA, CM .
PHILOSOPHICAL MAGAZINE, 1972, 25 (01) :1-&
[2]   CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE [J].
BRENNAN, S ;
STOHR, J ;
JAEGER, R ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1414-1418
[3]   INFRARED VIBRATIONAL-SPECTRA OF AMORPHOUS SI AND GE [J].
BRODSKY, MH ;
LURIO, A .
PHYSICAL REVIEW B, 1974, 9 (04) :1646-1651
[4]   HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J].
GRUNTHANER, FJ ;
GRUNTHANER, PJ ;
VASQUEZ, RP ;
LEWIS, BF ;
MASERJIAN, J ;
MADHUKAR, A .
PHYSICAL REVIEW LETTERS, 1979, 43 (22) :1683-1686
[5]   PHOTOELECTRON-SPECTRA OF FLUORINATED AMORPHOUS-SILICON (A-SI-F) [J].
GRUNTZ, KJ ;
LEY, L ;
JOHNSON, RL .
PHYSICAL REVIEW B, 1981, 24 (04) :2069-2080
[6]   CHARGE-DENSITY VARIATION IN A MODEL OF AMORPHOUS-SILICON [J].
GUTTMAN, L ;
CHING, WY ;
RATH, J .
PHYSICAL REVIEW LETTERS, 1980, 44 (23) :1513-1516
[7]   GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].
HIMPSEL, FJ ;
HEIMANN, P ;
CHIANG, TC ;
EASTMAN, DE .
PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115
[8]   CHEMICAL-SHIFTS OF AUGER-ELECTRON LINES AND ELECTRON-BINDING ENERGIES IN FREE MOLECULES - SILICON-COMPOUNDS [J].
KELFVE, P ;
BLOMSTER, B ;
SIEGBAHN, H ;
SIEGBAHN, K ;
SANHUEZA, E ;
GOSCINSKI, O .
PHYSICA SCRIPTA, 1980, 21 (01) :75-88
[9]  
KRAMER B, 1982, UNPUB 16TH P INT C P
[10]  
MOSS SC, 1969, PHYS REV LETT, V21, P1575