EFFECT OF SC1 PROCESS ON SILICON SURFACE MICROROUGHNESS AND OXIDE BREAKDOWN CHARACTERISTICS

被引：6

作者：

AKIYAMA, K ^{[1
]}

NAITO, N ^{[1
]}

NAGAMORI, M ^{[1
]}

KOYA, H ^{[1
]}

MORITA, E ^{[1
]}

SASSA, K ^{[1
]}

SUGA, H ^{[1
]}

机构：

[1] MITSUBISHI MAT SILICON CORP,NODA,CHIBA 278,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 2A期

关键词：

SILICON; MICROROUGHNESS; SC1; AFM; PSI; DIELECTRIC BREAKDOWN;

D O I：

10.1143/JJAP.34.L153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface microroughness and its effects on dielectric breakdown characteristics have been investigated for silicon wafers treated in SC1-based solutions. Surface microroughness was quantified using atomic force microscopy (AFM) and phase shift interferometry (PSI). In contrast to previous reports that SC1 treatment caused undulation of the surface, our observation showed a nominal amount of deterioration. Even prolonged dipping in a solution with high etching rate did not roughen the surface, and the dielectric breakdown characteristics were not affected.

引用

页码：L153 / L155

页数：3

共 6 条

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