EFFECTS OF N2O ANNEAL AND REOXIDATION ON THERMAL OXIDE CHARACTERISTICS

被引：58

作者：

LIU, ZH ^{[1
]}

WANN, HJ ^{[1
]}

KO, PK ^{[1
]}

HU, CM ^{[1
]}

CHENG, YC ^{[1
]}

机构：

[1] CITY POLYTECH HONG KONG,HONG KONG,HONG KONG

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 08期

关键词：

D O I：

10.1109/55.192772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of post-oxidation N2O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N2O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N2O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N2O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides.

引用

页码：402 / 404

页数：3

共 12 条

[1] FURNACE NITRIDATION OF THERMAL SIO2 IN PURE N2O AMBIENT FOR ULSI MOS APPLICATIONS [J].

AHN, J ;

TING, W ;

KWONG, DL .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) :117-119

[2]

CHU TY, 1991, J ELECTROCHEM SOC, V138, P113

[3] TRAPPING EFFECTS IN THIN OXYNITRIDE LAYERS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES [J].

FAIGON, A ;

SHAPPIR, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4633-4637

[4] IMPROVEMENT OF THIN-GATE OXIDE INTEGRITY USING THROUGH-SILICON-GATE NITROGEN ION-IMPLANTATION [J].

HADDAD, S ;

LIANG, MS .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :58-60

[5] ELECTRICAL AND PHYSICAL-PROPERTIES OF ULTRATHIN REOXIDIZED NITRIDED OXIDES PREPARED BY RAPID THERMAL-PROCESSING [J].

HORI, T ;

IWASAKI, H ;

TSUJI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :340-350

[6]

Hwang H., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P421, DOI 10.1109/IEDM.1990.237142

[7] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J].

LAI, SK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2540-2546

[8]

LIANG MS, 1984, IEEE T ELECTRON DEV, V31, P1238, DOI 10.1109/T-ED.1984.21694

[9]

Ma T. P., 1989, IONIZING RAD EFFECTS

[10] GENERATION-ANNEALING KINETICS OF THE INTERFACE DONOR STATES AT 0.25 EV ABOVE THE MIDGAP AND THE TURN-AROUND PHENOMENA ON OXIDIZED SILICON DURING AVALANCHE ELECTRON INJECTION [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJT .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2547-2555

← 1 2 →