ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC

被引：53
作者：
BARAFF, GA
SCHLUTER, M
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.35.6154
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：6154 / 6164
页数：11
相关论文
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