LOW-TEMPERATURE THERMAL-OXIDATION OF AMORPHOUS-SILICON AND ITS APPLICATION TO AMORPHOUS-SILICON MOS-TRANSISTORS

被引：10
作者：
UCHIDA, Y
IKEGAMI, T
MATSUMURA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 09期
关键词：
D O I：
10.1143/JJAP.24.L733
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L733 / L735
页数：3
相关论文
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