SINGLE CRYSTALS OF beta-Ga2O3, GROWN FROM THE MELT OF GALLIUM AND ALUMINUM OXIDES

被引：0
|
作者：
Maslov, V. N. [1 ,2 ]
Krymov, V. M. [1 ,2 ]
Kalashnikov, E. V. [1 ,4 ]
Nikolaev, V. I. [1 ,2 ,3 ]
机构：
[1] ITMO, Kronverkskiy Pr,49, St Petersburg 197101, Russia
[2] RAS, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Perfect Crystals LLC, St Petersburg 194064, Russia
[4] MGOU, Moscow 105005, Russia
来源：
MATERIALS PHYSICS AND MECHANICS | 2014年 / 21卷 / 02期
基金：
俄罗斯科学基金会;
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Tabular beta-Ga2O3 single crystals were grown by method of free crystallization from Ga2O3-Al2O3 melt. Growth mechanisms and properties of the crystals have been studied; main features of optical behavior and defect structure of the crystals have been revealed.
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页码：194 / 199
页数：6
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