OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS

被引：48

作者：

BONNEFOI, AR ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

ANDERSON, GB ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.98195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：344 / 346

页数：3

共 14 条

[1] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].

BATEY, J ;

WRIGHT, SL .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209

[2] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BONNEFOI, AR ;

COLLINS, RT ;

MCGILL, TC ;

BURNHAM, RD ;

PONCE, FA .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :285-287

[3] CURRENT TRANSPORT MECHANISMS IN GAAS/ALAS TUNNEL STRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BONNEFOI, AR ;

CHOW, DH ;

MCGILL, TC ;

BURNHAM, RD ;

PONCE, FA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :988-995

[4]

BONNEFOI AR, UNPUB

[5]

CASEY HC, 1978, HETEROSTRUCTURE LA A, P192

[6] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[7] CURRENT-VOLTAGE CHARACTERISTICS THROUGH GAAS ALGAAS GAAS HETEROBARRIERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HASE, I ;

KAWAI, H ;

KANEKO, K ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) :3792-3797

[8]

MARSH AC, UNPUB IEEE J QUANTUM

[9] RESONANT TUNNELING OF HOLES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

WANG, WI ;

RICCO, B ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :415-417

[10]

MENDEZ EE, UNPUB PHYS REV B

← 1 2 →