EXPERIMENTAL AND THEORETICAL-STUDY OF BURIED CHANNEL MOS STRUCTURES

被引：3

作者：

HATERT, R ^{[1
]}

SINON, R ^{[1
]}

VANDEWIELE, F ^{[1
]}

机构：

[1] UNIV CATHOLIQUE LOUVAIN, PHYS & ELECTR ETAT SOLIDE LAB, B-3000 LOUVAIN LA NEUVE, BELGIUM

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssa.2210360125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：235 / 246

页数：12

共 12 条

[1] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J].

BARRY, ML ;

OLOFSEN, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) :854-&

[2] DEPLETION-MODE IGFET MADE BY DEEP ION-IMPLANTATION [J].

EDWARDS, JR ;

MARR, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :283-289

[3]

HARA H, 1972, ELECTRON COMMUN JPN, V55, P99

[4] MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGFET [J].

HUANG, JST ;

TAYLOR, GW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :995-1001

[5] DEPLETION-LOAD, P-CHANNEL, BIPOLAR-IGFET TECHNOLOGY [J].

MARR, G ;

MOWERY, GL .

BELL SYSTEM TECHNICAL JOURNAL, 1975, 54 (01) :69-79

[6] HIGH-PERFORMANCE N-CHANNEL MOS LSI USING DEPLETION-TYPE LOAD ELEMENTS [J].

MASUHARA, T ;

NAGATA, M ;

HASHIMOTO, N .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (03) :224-+

[7] MEASUREMENTS ON DEPLETION-MODE FIELD-EFFECT TRANSISTORS AND BURIED CHANNEL MOS CAPACITORS FOR CHARACTERIZATION OF BULK TRANSFER CHARGE-COUPLED-DEVICES [J].

MOHSEN, AM ;

MORRIS, FJ .

SOLID-STATE ELECTRONICS, 1975, 18 (05) :407-416

[8]

REDDI VGK, 1966, IEEE T ELECTRON DEV, V12, P581

[9]

SANSEN W, 1974, INT ELECTRON DEVICES, P541

[10]

SCHEMMERT W, 1974, INT ELECTRON DEVICES, P546

← 1 2 →