INHOMOGENEITY IN SEMI-INSULATING GAAS REVEALED BY SCANNING LEAKAGE CURRENT MEASUREMENTS

被引：40
作者：
MATSUMOTO, Y
WATANABE, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 08期
关键词：
D O I：
10.1143/JJAP.21.L515
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L515 / L517
页数：3
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