DEVELOPMENT OF A SCANNING DEEP-LEVEL TRANSIENT SPECTROSCOPY (SDLTS) SYSTEM AND APPLICATION TO WELL-CHARACTERIZED DISLOCATIONS IN SILICON

被引：0

作者：

WOODHAM, RG

BOOKER, GR

机构：

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1987年 / 87期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：781 / 786

页数：6

相关论文

共 8 条

[1] BREITENSTEIN O, 1985, I PHYS C SER, V76, P319
[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[3] A HIGH-SENSITIVITY BRIDGE FOR THE MEASUREMENT OF DEEP STATES IN SEMICONDUCTORS
MISRACHI, S
PEAKER, AR
HAMILTON, B
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1980, 13 (10): : 1055 - 1061
[4] THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
OURMAZD, A
WILSHAW, PR
BOOKER, GR
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 289 - 295
[5] NEW SPECTROSCOPIC TECHNIQUE FOR IMAGING SPATIAL-DISTRIBUTION OF NONRADIATIVE DEFECTS IN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE
PETROFF, PM
LANG, DV
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 60 - 62
[6] CAPACITANCE TRANSIENT SPECTROSCOPY OF STATES LOCALIZED AT DISLOCATIONS
SCHROTER, W
SEIBT, M
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 329 - 337
[7] DEEP LEVEL DEFECTS IN PLASTICALLY DEFORMED SILICON
WEBER, ER
ALEXANDER, H
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 319 - 328
[8] WILSHAW PR, 1985, I PHYS C SER, V76, P329