OSCILLATORY AND MAGNETO-OSCILLATORY STRUCTURE OF THE TUNNEL CURRENT IN DOUBLE-BARRIER HETEROSTRUCTURES

被引:4
作者
FIGIELSKI, T
VITUSEVICH, SA
MAKOSA, A
DOBROWOLSKI, W
BELYAEV, AE
WOSINSKI, T
KONAKOVA, RV
KRAVCHENKO, LN
机构
[1] NATL ACAD SCI UKRAINE,INST SEMICOND PHYS,KIEV 252028,UKRAINE
[2] SCI & RES INST MOLEC ELECTR,103460 MOSCOW,RUSSIA
关键词
QUANTUM WELLS; SEMICONDUCTORS; TUNNELING;
D O I
10.1016/0038-1098(95)00028-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We investigated the current-voltage I(V) characteristics of GaAs/AlAs double-barrier heterostructures. A fine periodic structure of the resonant tunnel current has been revealed. We attribute it to a sequence of the collective excitations, presumably of the coupled plasmon-phonon type, that are induced in the heavily doped collector region by hot electrons which escape from the quantum well. An oscillatory structure appears also in the valley regions of the I(V) curve under a high magnetic field parallel to the current. It is due to the off-resonance tunnelling between the Landau-quantized states of the emitter and quantum well. Particular phonon-assisted processes in the tunnelling have been identified.
引用
收藏
页码:93 / 98
页数:6
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