GOLD, SELF-, AND DOPANT DIFFUSION IN SILICON

被引：3

作者：

MONSON, TK ^{[1
]}

VANVECHTEN, JA ^{[1
]}

ZHANG, QS ^{[1
]}

GRAUPNER, RK ^{[1
]}

机构：

[1] KOMATSU SILICON USA INC,PORTLAND,OR 97211

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.49.2972

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the subject publication, Mathiot casts doubt upon our Monte Carlo simulations of Au diffusion in Si with the kick-out mechanism. We argue that our simulations were correct. In addition, we observe that Mathiot's treatment of diffusion lacks information on boundary conditions which is necessary for accurate modeling. Mathiot's model also ignores the possible existence of vacancy clusters. Mathiot concluded that diffusion of Au in Si is dominated by the kick-out mechanism. We argue that this conclusion is unjustified.

引用

页码：2972 / 2976

页数：5

共 11 条

[1] POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON [J].