ELECTRONIC STATES OF METAL ATOMS ON THE GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY

被引：109

作者：

FEENSTRA, RM

机构：

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.63.1412

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1412 / 1415

页数：4

共 16 条

[1] GEOMETRIC AND LOCAL ELECTRONIC-STRUCTURE OF SI(111)-AS [J].

BECKER, RS ;

SWARTZENTRUBER, BS ;

VICKERS, JS ;

HYBERTSEN, MS .

PHYSICAL REVIEW LETTERS, 1988, 60 (02) :116-119

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[3] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].

CUNNELL, FA ;

GOOCH, CH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :127-133

[4] FERMI-LEVEL PINNING AT THE SB/GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING SPECTROSCOPY [J].

FEENSTRA, RM ;

MARTENSSON, P .

PHYSICAL REVIEW LETTERS, 1988, 61 (04) :447-450

[5] REAL-SPACE OBSERVATION OF PI-BONDED CHAINS AND SURFACE DISORDER ON SI(111)2X1 [J].

FEENSTRA, RM ;

THOMPSON, WA ;

FEIN, AP .

PHYSICAL REVIEW LETTERS, 1986, 56 (06) :608-611

[6] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].

FEENSTRA, RM ;

STROSCIO, JA ;

TERSOFF, J ;

FEIN, AP .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195

[7] SCANNING TUNNELING MICROSCOPE FOR LOW-TEMPERATURE, HIGH MAGNETIC-FIELD, AND SPATIALLY RESOLVED SPECTROSCOPY [J].

FEIN, AP ;

KIRTLEY, JR ;

FEENSTRA, RM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (10) :1806-1810

[8] SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J].

HAMERS, RJ ;

TROMP, RM ;

DEMUTH, JE .

PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1972-1975

[9]

KLEPEIS JE, IN PRESS J VAC SCI B

[10]

LUDEKE R, IN PRESS J VAC SCI B

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