INTERFACE-TRAP ENHANCED GATE-INDUCED LEAKAGE CURRENT IN MOSFET

被引：71

作者：

CHEN, IC ^{[1
]}

TENG, CW ^{[1
]}

COLEMAN, DJ ^{[1
]}

NISHIMURA, A ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS JAPAN LTD,VLSI DEV,MIHO 30004,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 05期

关键词：

D O I：

10.1109/55.31725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：216 / 218

页数：3

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