AN OPTICAL STUDY OF LITHIUM AND LITHIUM-OXYGEN COMPLEXES AS DONOR IMPURITIES IN SILICON

被引:26
作者
GILMER, TE
FRANKS, RK
BELL, RJ
机构
关键词
D O I
10.1016/0022-3697(65)90098-3
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1195 / &
相关论文
共 20 条
[2]  
AGGARWAL RL, 1964, B AM PHYS SOC, V9, P645
[3]   A SIMPLE GRATING SPECTROMETER FOR INFRARED [J].
BELL, RJ ;
GILMER, TE .
APPLIED OPTICS, 1965, 4 (02) :157-&
[4]   A NEW RADIATION CHOPPER PRINCIPLE [J].
BELL, RJ ;
GILMER, TE .
APPLIED OPTICS, 1965, 4 (01) :45-&
[5]  
BICHARD JW, 1962, CANAD J PHYS, V40, P1481
[6]  
Boltaks B.I., 1961, DIFFUSION SEMICONDUC
[7]  
DEXTER DL, 1958, SOLID STATE PHYS, V6, P353
[8]   ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].
FEHER, G .
PHYSICAL REVIEW, 1959, 114 (05) :1219-1244
[9]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[10]   OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].
KAISER, W ;
KECK, PH .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887