DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV

被引：3541
作者：
ASPNES, DE
STUDNA, AA
机构：
来源：
PHYSICAL REVIEW B | 1983年 / 27卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.27.985
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：985 / 1009
页数：25
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共 143 条
[1]   THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS [J].
ADAMS, AC ;
SMITH, TE ;
CHANG, CC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1787-1794
[2]   GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J].
ADAMS, AC ;
PRUNIAUX, BR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :408-414
[3]   MODIFIED KRAMERS-KRONIG ANALYSIS OF OPTICAL SPECTRA [J].
AHRENKIEL, RK .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1971, 61 (12) :1651-+
[4]  
Algazin Yu. B., 1978, Optics and Spectroscopy, V45, P183
[5]  
ANTONYUK VN, 1980, UKR FIZ ZH+, V25, P960
[6]   DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J].
ARCHER, RJ .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) :970-&
[7]   OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J].
ARCHER, RJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) :619-622
[8]   OPTICAL CONSTANTS OF GERMANIUM - 3600-A TO 7000-A [J].
ARCHER, RJ .
PHYSICAL REVIEW, 1958, 110 (02) :354-358
[9]  
Aspnes D. E., 1976, OPTICAL PROPERTIES S, P799
[10]   DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1057-1060
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