TRANSPARENT CONDUCTING P-TYPE NIO THIN-FILMS PREPARED BY MAGNETRON SPUTTERING

被引：865

作者：

SATO, H

MINAMI, T

TAKATA, S

YAMADA, T

机构：

[1] Electron Device System Laboratory, Kanazawa Institute of Technology, Nonoichi, Ishikawa, 921

来源：

THIN SOLID FILMS | 1993年 / 236卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90636-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent and conductive thin films consisting of p-type nickel oxide (NiO) semiconductors were prepared by r.f. magnetron sputtering. A resistivity of 1.4 x 10(-1) Ohm cm and a hole concentration of 1.3 x 10(19) cm(-3) were obtained for non-intentionally doped NiO films prepared at a substrate temperature of 200 degrees C in a pure oxygen sputtering gas. An average transmittance of about 40% in the visible range was obtained for a 110 nm thick NiO film. A semitransparent thin film pin diode consisting of p-NiO/i-NiO/i-ZnO/n-ZnO layers having a voltage-current rectification characteristic and an average transmittance above 20% in the visible range was fabricated on a glass substrate.

引用

页码：27 / 31

页数：5

共 15 条

[1] Electrical and optical properties of narrow-band materials [J].

Adler, David ;

Feinleib, Julius .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08) :3112-3134

[2] SINTERING OF LIXNI1-XO SOLID-SOLUTIONS AT 1200-DEGREES-C [J].

ANTOLINI, E .

JOURNAL OF MATERIALS SCIENCE, 1992, 27 (12) :3335-3340

[3] TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].

CHOPRA, KL ;

MAJOR, S ;

PANDYA, DK .

THIN SOLID FILMS, 1983, 102 (01) :1-46

[4] ELECTROCHROMIC BEHAVIOR OF NICKEL-OXIDE ELECTRODES .1. IDENTIFICATION OF THE COLORED STATE USING QUARTZ CRYSTAL MICROBALANCE [J].

CORDOBATORRESI, SI ;

GABRIELLI, C ;

HUGOTLEGOFF, A ;

TORRESI, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (06) :1548-1553

[5]

DAWAR AL, 1984, J MATER SCI, V19, P1, DOI 10.1007/BF02403106

[6] N-ZNO/P-CDSIAS2 HETEROJUNCTION SOLAR-CELLS [J].

KIMMEL, M ;

LUXSTEINER, M ;

VOGT, M ;

BUCHER, E .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1560-1561

[7] VISIBLE-LIGHT INJECTION-ELECTROLUMINESCENT A-SIC/P-I-N DIODE [J].

KRUANGAM, D ;

ENDO, T ;

WEI, GP ;

OKAMOTO, H ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10) :L806-L808

[8]

KUNZ AB, 1981, J PHYS C L, V14, P445

[9] CORRELATED BARRIER HOPPING IN NIO FILMS [J].

LUNKENHEIMER, P ;

LOIDL, A ;

OTTERMANN, CR ;

BANGE, K .

PHYSICAL REVIEW B, 1991, 44 (11) :5927-5930

[10] HIGHLY CONDUCTIVE AND TRANSPARENT ZINC-OXIDE FILMS PREPARED BY RF MAGNETRON SPUTTERING UNDER AN APPLIED EXTERNAL MAGNETIC-FIELD [J].

MINAMI, T ;

NANTO, H ;

TAKATA, S .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :958-960

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