TRANSPARENT CONDUCTING P-TYPE NIO THIN-FILMS PREPARED BY MAGNETRON SPUTTERING

被引：875

作者：

SATO, H

MINAMI, T

TAKATA, S

YAMADA, T

机构：

[1] Electron Device System Laboratory, Kanazawa Institute of Technology, Nonoichi, Ishikawa, 921

来源：

THIN SOLID FILMS | 1993年 / 236卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90636-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent and conductive thin films consisting of p-type nickel oxide (NiO) semiconductors were prepared by r.f. magnetron sputtering. A resistivity of 1.4 x 10(-1) Ohm cm and a hole concentration of 1.3 x 10(19) cm(-3) were obtained for non-intentionally doped NiO films prepared at a substrate temperature of 200 degrees C in a pure oxygen sputtering gas. An average transmittance of about 40% in the visible range was obtained for a 110 nm thick NiO film. A semitransparent thin film pin diode consisting of p-NiO/i-NiO/i-ZnO/n-ZnO layers having a voltage-current rectification characteristic and an average transmittance above 20% in the visible range was fabricated on a glass substrate.

引用

页码：27 / 31

页数：5

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