MULTIPLICATION NOISE IN GAAS/ALGAAS MULTIQUANTUM WELL AVALANCHE PHOTODIODES WITH DIFFERENT WELL WIDTHS

被引：4
|
作者：
SALOKATVE, A
TOIVONEN, M
HOVINEN, M
机构：
[1] Tampere University of Technology, Department of Physics, SF-33101, Tampere
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 04期
关键词：
PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920261
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dependence of multiplication excess noise of GaAs/Al0.36Ga0.64As multiquantum well avalanche photodiodes on GaAs well width was studied through noise measurements. Three samples with approximately 480 angstrom barriers and wells of 134, 278, and 445 angstrom in thickness were grown by molecular beam epitaxy. An effective ratio of hole and electron ionisation rates of 0.4 was measured for all the samples, indicating that it cannot be affected by varying the well width in the range of layer thicknesses studied in the Letter.
引用
收藏
页码：416 / 417
页数：2
相关论文
共 18 条
  • [1] DOUBLE JUNCTION ALINAS/GAINAS MULTIQUANTUM WELL AVALANCHE PHOTODIODES
    LEBELLEGO, Y
    PRASEUTH, JP
    SCAVENNEC, A
    ELECTRONICS LETTERS, 1991, 27 (24) : 2228 - 2230
  • [2] DEMONSTRATION OF POLARIZATION ROTATION GATE IN GAAS/ALGAAS MULTIQUANTUM WELL WAVE-GUIDES
    SNOW, PA
    DAY, IE
    WHITE, IH
    PENTY, RV
    TSANG, HK
    GRANT, RS
    SU, Z
    SIBBETT, W
    SOOLE, JBD
    LEBLANC, HP
    GOZDZ, AS
    ANDREADAKIS, NC
    CANEAU, C
    ELECTRONICS LETTERS, 1992, 28 (25) : 2346 - 2348
  • [3] GAAS/AIGAAS HEMT STRUCTURES WITH MULTIQUANTUM WELL CHANNELS
    HUMERHAGER, T
    KLEIN, W
    KEMPTER, R
    BOHM, G
    TRANKLE, G
    WEIMANN, G
    ELECTRONICS LETTERS, 1991, 27 (12) : 1035 - 1037
  • [4] INGAAS/INALAS MULTI-QUANTUM-WELL WAVE-GUIDED PIN PHOTODIODES WITH WIDE TUNABILITY AND AVALANCHE MULTIPLICATION
    WAKITA, K
    KOTAKA, I
    KOZEN, A
    ELECTRONICS LETTERS, 1994, 30 (20) : 1711 - 1713
  • [5] Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions-composite structures grown using interfacial misfit arrays
    Craig, A. P.
    Reyner, C. J.
    Marshall, A. R. J.
    Huffaker, D. L.
    APPLIED PHYSICS LETTERS, 2014, 104 (21)
  • [6] ROLE OF SATELLITE VALLEYS IN IONIZATION RATE ENHANCEMENT IN MULTIPLE QUANTUM-WELL AVALANCHE PHOTODIODES
    CZAJKOWSKI, IK
    ALLAM, J
    ADAMS, AR
    ELECTRONICS LETTERS, 1990, 26 (16) : 1311 - 1313
  • [7] Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes
    Ng, BK
    Yan, F
    David, JPR
    Tozer, RC
    Rees, GJ
    Qin, C
    Zhao, JH
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (09) : 1342 - 1344
  • [8] On the Temperature Delocalization of Carriers in GaAs/AlGaAs/InGaAs Quantum-Well Heterostructures
    Pikhtin, N. A.
    Lyutetskiy, A. V.
    Nikolaev, D. N.
    Slipchenko, S. O.
    Sokolova, Z. N.
    Shamakhov, V. V.
    Shashkin, I. S.
    Bondarev, A. D.
    Vavilova, L. S.
    Tarasov, I. S.
    SEMICONDUCTORS, 2014, 48 (10) : 1342 - 1347
  • [9] ION-BEAM MILLING-INDUCED DAMAGE IN ALGAAS GAAS ALGAAS SINGLE QUANTUM-WELL
    SWAMINATHAN, V
    PRZYBYLEK, GJ
    GUTH, G
    ASOM, MT
    ELECTRONICS LETTERS, 1991, 27 (25) : 2320 - 2322
  • [10] Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes
    Romero, MJ
    Gutiérrez, M
    Sánchez, JJ
    González, D
    Aragón, G
    Izpura, I
    García, R
    MICROELECTRONICS JOURNAL, 1999, 30 (4-5) : 427 - 431
12