ZERO-PHONON LINE ASSOCIATED WITH THE MIDGAP LEVEL EL2 IN GAAS - CORRELATION WITH THE ASGA ANTISITE DEFECT

被引：18

作者：

TSUKADA, N ^{[1
]}

KIKUTA, T ^{[1
]}

ISHIDA, K ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,KAWASAKI 211,JAPAN

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8859

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8859 / 8862

页数：4

共 24 条

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[2]

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BONNAFE, J ;

CASTAGNE, M .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :3020-3021

[5]

FUKUDA T, 1982, IOP C P, V65, P23

[6]

Gatos H. C., 1985, Microscopic Identification of Electronic Defects in Semiconductors, P153

[7] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J].

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NEWMAN, RC ;

WHITEHOUSE, JE .

SOLID STATE COMMUNICATIONS, 1981, 40 (04) :473-477

[8] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

KUSZKO, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2204-2207

[9] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

LAGOWSKI, J ;

PARSEY, JM ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304

[10] ASGA-INDUCED DICHROISM IN GAAS [J].

KAUFMANN, U .

PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1332-1332

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