A NEW APPROACH FOR NUMERICAL-SIMULATION OF SCANNING TUNNELING MICROSCOPY

被引：0
作者：
MESHKOV, SV
MOLOTKOV, SN
机构：
来源：
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1991年 / 100卷 / 05期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A simple and effective method for calculating the tunneling current in SIM is proposed. The method reduces the problem of the tunneling current calculation to obtaining the quasistationary state spectrum. In addition, the method allows to involve the effect of a tip on the spectrum of crystal states at the surface. The method is demonstrated for several simple examples in the framework of the tight-binding model.
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页码：1640 / 1648
页数：9
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