HG1-XCDXTE-HG1-YCDYTE (0-LESS-THAN-OR-EQUAL-TO-X,Y-LESS-THAN-OR-EQUAL-TO-1) HETEROSTRUCTURES - PROPERTIES, EPITAXY, AND APPLICATIONS

被引：77
作者：
HERMAN, MA [1 ]
PESSA, M [1 ]
机构：
[1] TAMPERE UNIV TECHNOL,DEPT PHYS,SF-33101 TAMPERE,FINLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期
关键词：
D O I：
10.1063/1.335408
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2671 / 2694
页数：24
相关论文
共 186 条
[1]  
ALPER AM, 1970, PHASE DIAGRAMS MATER
[2]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[3]   STRUCTURE OF ION-IMPLANTED AND ANNEALED HG1-XCDXTE [J].
BAHIR, G ;
KALISH, R .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3129-3140
[4]   MERCURY PRESSURE OVER HGTE AND HGCDTE IN A CLOSED ISOTHERMAL SYSTEM [J].
BAILLY, F ;
SVOB, L ;
COHENSOLAL, G ;
TRIBOULET, R .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4244-4250
[5]   EFFECTS OF GROWTH SPEED ON THE COMPOSITIONAL VARIATIONS IN CRYSTALS OF CADMIUM MERCURY TELLURIDE [J].
BARTLETT, BE ;
CAPPER, P ;
HARRIS, JE ;
QUELCH, MJT .
JOURNAL OF CRYSTAL GROWTH, 1979, 46 (05) :623-629
[6]   A MODIFIED APPROACH TO ISOTHERMAL GROWTH OF ULTRAHIGH QUALITY HGCDTE FOR INFRARED APPLICATIONS [J].
BECLA, P ;
LAGOWSKI, J ;
GATOS, HC ;
RUDA, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1171-1173
[7]   OPTIMIZATION OF ISOTHERMAL GROWTH OF HGCDTE LAYERS [J].
BECLA, P ;
LAGOWSKI, J ;
GATOS, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1103-1105
[8]   ISOTHERMAL GROWTH OF HGCDTE UNDER CONTROLLED HG VAPOR-PRESSURE [J].
BECLA, P ;
LAGOWSKI, J ;
GATOS, HC ;
JEDRAL, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2855-2857
[9]   GROWTH OF CDTE-FILMS ON ALTERNATIVE SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].
BICKNELL, RN ;
MYERS, TH ;
SCHETZINA, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :423-426
[10]  
Blair J., 1961, METALLURGY ELEMENTAL, P393
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