GROWTH OF INP ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：43

作者：

CRUMBAKER, TE ^{[1
]}

LEE, HY ^{[1
]}

HAFICH, MJ ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.101209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：140 / 142

页数：3

共 10 条

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[7] SUBSTRATE ORIENTATION AND PROCESSING EFFECTS ON GAAS/SI MISORIENTATION IN GAAS-ON-SI GROWN BY MBE [J].

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[10] ALL-SILICON ACTIVE AND PASSIVE GUIDED-WAVE COMPONENTS FOR lambda equals 1. 3 AND 1. 6 mu M. [J].

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