BREAKDOWN AND WEAROUT OF MOS GATE OXIDES

被引：0
|
作者：
DEKEERSMAECKER, RF
HEYNS, MM
HAYWOOD, SK
DARAKCHIEV, IS
HILLEN, MW
机构：
[1] CATHOLIC UNIV LEUVEN,ESAT LAB,B-3030 HEVERLE,BELGIUM
[2] PHILIPS ELCOMA,NIJMEGEN,NETHERLANDS
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C85 / C85
页数：1
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