KINK FORMATION IN CHARGED DISLOCATION

被引:52
作者
HAASEN, P
机构
[1] DEUTSCHEN FORSCH GEMEINSCHAFT,SONDER FORSCH BEREICH 126,GOTTINGEN,FED REP GER
[2] UNIV GOTTINGEN,INST MET PHYS,GOTTINGEN,FED REP GER
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 28卷 / 01期
关键词
D O I
10.1002/pssa.2210280115
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:145 / 155
页数:11
相关论文
共 38 条
[1]  
ABLOVA MS, 1971, FIZ TVERD TELA+, V12, P2910
[2]  
ABLOVA MS, 1970, FIZ TVERD TELA+, V11, P2089
[3]  
ALEXANDER H, 1968, SOLID STATE PHYS, V22, P28
[4]   The Effect of Plastic Bending on the Electrical Properties of Indium Antimonide [J].
Bell, R. L. ;
Latkowski, R. ;
Willoughby, A. F. W. .
JOURNAL OF MATERIALS SCIENCE, 1966, 1 (01) :66-78
[5]  
BENOIT C, 1961, SELECTED CONSTANTS S
[6]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[7]   YIELD POINT OF HIGHLY-DOPED GERMANIUM [J].
BRION, HG ;
HAASEN, P ;
SIETHOFF, H .
ACTA METALLURGICA, 1971, 19 (04) :283-&
[8]   IMPURITY EFFECTS ON DISLOCATION VELOCITY IN GALLIUM-ARSENIDE [J].
CHOI, SK ;
MIHARA, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (04) :1154-&
[9]  
EROFEEV VN, 1971, SOV PHYS-SOLID STATE, V13, P116
[10]  
Erofeeva S. A., 1973, Soviet Physics - Solid State, V15, P538