Theoretical and experimental results relating to a novel method for achieving direct optical control of a microwave phase shifter are presented, based upon a microwave reflective switch in which on- and off-states are controlled by direct optical illumination of a GaAs FET. Results, hitherto unavailable in the literature, verify previously published models for the GaAs FET as a microwave switch while under electrical control and establish the use of this model to predict the response of the switch under direct optical control over the frequency range 8 to 12 GHz.
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FUJITSU LABS LTD,COMPOUND SEMICOND LAB,HIGH ELECTRON MOBIL TRANSISTOR SECT,ATSUGI 24301,JAPANFUJITSU LABS LTD,COMPOUND SEMICOND LAB,HIGH ELECTRON MOBIL TRANSISTOR SECT,ATSUGI 24301,JAPAN
FUKUTA, M
HIRACHI, Y
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FUJITSU LABS LTD,COMPOUND SEMICOND LAB,HIGH ELECTRON MOBIL TRANSISTOR SECT,ATSUGI 24301,JAPANFUJITSU LABS LTD,COMPOUND SEMICOND LAB,HIGH ELECTRON MOBIL TRANSISTOR SECT,ATSUGI 24301,JAPAN