RADIATIVE DEEP LEVELS IN AS-GROWN AND PROCESSED INP

被引:0
|
作者
CONSTANT, AP
WESSELS, BW
机构
[1] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
[2] NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:303 / 304
页数:2
相关论文
共 50 条
  • [41] The Spectrum of Deep Levels in the InP Schottky Barrier
    Bocharova, I.A.
    Malyshev, S.A.
    Journal of Applied Spectroscopy, 2000, 67 (06) : 1054 - 1057
  • [42] Extended defects in as-grown CdZnTe
    Xu, L.
    Bolotnikov, A. E.
    Hossain, A.
    Kim, K-H.
    Gul, R.
    Yang, G.
    Camarda, G. S.
    Marchini, L.
    Cui, Y.
    James, R. B.
    Xu, Y.
    Wang, T.
    Jie, W.
    HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XII, 2010, 7805
  • [43] CHANNELING STUDIES OF AS-GROWN GAN
    LINDEN, M
    EJDER, E
    HELLBORG, R
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (02): : K167 - K170
  • [44] As-grown, green synthetic diamonds
    Breeding, Christopher M.
    Shigley, James E.
    Shen, Andy H.
    JOURNAL OF GEMMOLOGY, 2005, 29 (7-8) : 387 - 394
  • [45] Characterization of As-grown defects in silicon
    Kissinger, G
    Graf, D
    Lambert, U
    Morgenstern, G
    Vanhellemont, J
    Richter, H
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 285 - 288
  • [46] Radiative efficiencies and deep levels in zinc selenide
    Allen, J.W.
    Advanced Materials for Optics and Electronics, 1994, 3 (1-6): : 199 - 202
  • [47] IDENTIFICATION OF DEEP RADIATIVE LEVELS IN VPE ZNSE
    CHRISTIANSON, KA
    WESSELS, BW
    JOURNAL OF LUMINESCENCE, 1984, 31-2 (DEC) : 433 - 435
  • [48] EVIDENCE FOR DEEP CENTERS IN N-INP GROWN BY MOVPE
    BENZAQUEN, M
    WALSH, D
    BEAUDOIN, M
    MAZURUK, K
    PUETZ, N
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 562 - 568
  • [50] Hidden hydrogen in as-grown ZnO
    Shi, GA
    Saboktakin, M
    Stavola, M
    Pearton, SJ
    APPLIED PHYSICS LETTERS, 2004, 85 (23) : 5601 - 5603