RADIATIVE DEEP LEVELS IN AS-GROWN AND PROCESSED INP

被引：0
|
作者：
CONSTANT, AP
WESSELS, BW
机构：
[1] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201
[2] NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：303 / 304
页数：2
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