SEMICONDUCTOR SURFACE DOPING BY ELECTRON-BEAM MELTING OF THIN EVAPORATED LAYERS

被引:0
|
作者
MUNITZ, A [1 ]
BURSHTEIN, Z [1 ]
BAMBERGER, M [1 ]
机构
[1] TECHNION ISRAEL INST TECHNOL,IL-32000 HAIFA,ISRAEL
关键词
D O I
10.1016/0025-5408(85)90059-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
31
引用
收藏
页码:803 / 813
页数:11
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