CRYOGENIC RANDOM-ACCESS MEMORIES

[1] AHRONS RW, 1965, 1965 P INT C, P911

[2] BLATT H, 1964, AD602323 REPT

[3] CARRONA JJ, 1966, AFMLTR66106 TECH REP

[4] GANGE RA, 1967, ELECTRONICS, V40, P111

[5] SWITCHING SPEED AND DISSIPATION IN FAST, THIN-FILM CRYOTRON CIRCUITS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2452 - &

[6] 3-WIRE CRYOELECTRIC MEMORY SYSTEMS [J]. IEEE TRANSACTIONS ON MAGNETICS, 1966, MAG2 (03) : 398 - &

[1] AHRONS RW, 1965, 1965 P INT C, P911

[2] BLATT H, 1964, AD602323 REPT

[3] CARRONA JJ, 1966, AFMLTR66106 TECH REP

[4] GANGE RA, 1967, ELECTRONICS, V40, P111

[5] SWITCHING SPEED AND DISSIPATION IN FAST, THIN-FILM CRYOTRON CIRCUITS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2452 - &

[6] 3-WIRE CRYOELECTRIC MEMORY SYSTEMS [J]. IEEE TRANSACTIONS ON MAGNETICS, 1966, MAG2 (03) : 398 - &