LIQUID-PHASE EPITAXY OF INDIUM-DOPED LEAD TIN TELLURIDE

被引：0
|
作者：
VALATSKA, K
LIDEIKIS, T
SHIMKENE, I
DEDEGKAEV, TT
MOSHNIKOV, VA
机构：
来源：
INORGANIC MATERIALS | 1983年 / 19卷 / 01期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：41 / 45
页数：5
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF INDIUM-DOPED LEAD TIN TELLURIDE
    WEISER, K
    KLEIN, A
    AINHORN, M
    APPLIED PHYSICS LETTERS, 1979, 34 (09) : 607 - 609
  • [2] LIGHT QUENCHING OF PHOTOCONDUCTIVITY IN INDIUM-DOPED LEAD TIN TELLURIDE
    MOLLMANN, KP
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 149 (02): : 663 - 667
  • [3] DIFFUSION OF TIN IN LEAD TIN TELLURIDE EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    CROCKER, AJ
    DAVIS, W
    JONES, G
    THIN SOLID FILMS, 1986, 140 (02) : 237 - 243
  • [4] ADDITIONAL DEEP LEVEL IN STRONGLY INDIUM-DOPED LEAD TIN TELLURIDE
    MOLLMANN, KP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 109 (02): : K121 - K124
  • [5] LIQUID-PHASE EPITAXY OF LEAD-DOPED INDIUM-ANTIMONIDE
    AKCHURIN, RK
    KOVALEVSKII, ND
    INORGANIC MATERIALS, 1986, 22 (07) : 945 - 948
  • [6] PREPARATION AND PROPERTIES OF EPITAXIAL-FILMS OF INDIUM-DOPED LEAD TIN TELLURIDE
    DAVIS, JL
    HOUSTON, BB
    MARTINEZ, A
    THIN SOLID FILMS, 1984, 122 (03) : 217 - 229
  • [7] LEAD-TIN TELLURIDE HETEROSTRUCTURES AND LASER-DIODES BY LIQUID-PHASE EPITAXY
    TOMASETT.LR
    FONSTAD, CG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (12) : 1176 - 1176
  • [8] INVESTIGATION OF INDIUM-DOPED LEAD-TELLURIDE
    KAIDANOV, VI
    MELNIK, RB
    CHERNIK, IA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04): : 522 - 524
  • [9] Enhanced superconducting pairing interaction in indium-doped tin telluride
    Erickson, A. S.
    Chu, J. -H.
    Toney, M. F.
    Geballe, T. H.
    Fisher, I. R.
    PHYSICAL REVIEW B, 2009, 79 (02):
  • [10] Charge state of indium and point defects in indium-doped lead telluride crystals
    Freik, DM
    Boichuk, VM
    Mezhhovskaya, LI
    INORGANIC MATERIALS, 2004, 40 (10) : 1026 - 1031
12345