MINORITY-CARRIER INJECTION IN GE-AG SCHOTTKY DIODES

被引：3

|

作者：

MANIFACIER, JC ^{[1
]}

FILLARD, JP ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC,CTR ETUDES ELECTR SOLIDES,CNRS,PL E BATAILLON,34060 MONTPELLIER,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 04期

关键词：

D O I：

10.1016/0038-1101(76)90024-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：289 / 290

页数：2

相关论文

共 50 条

[41] PHOTOVOLTAIC SHORT-CIRCUIT MINORITY-CARRIER INJECTION
BERRY, WB
APPLIED PHYSICS LETTERS, 1974, 25 (04) : 195 - 196
[42] NEW EXPERIMENTAL-EVIDENCE FOR MINORITY-CARRIER MIS DIODES
TARR, NG
PULFREY, DL
APPLIED PHYSICS LETTERS, 1979, 34 (04) : 295 - 297
[43] Minority carrier injection limited current in Re/4H-SiC Schottky diodes
Sarpatwari, K.
Mohney, S. E.
Ashok, S.
Awadelkarim, O. O.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (06): : 1509 - 1513
[44] MINORITY-CARRIER INJECTION AND EXTRACTION IN N-TYPE GERMANIUM
RIEDER, G
HENISCH, HK
RAHIMI, S
MANIFACIER, JC
PHYSICAL REVIEW B, 1980, 21 (02): : 723 - 729
[45] MINORITY-CARRIER INJECTION AND TRANSIENT RESPONSE OF A MOS CAPACITOR.
Whelan, M.V.
Philips Research Report, 1975, 30 (04): : 262 - 264
[46] MINORITY-CARRIER INJECTION AND TRANSIENT-RESPONSE OF A MOS CAPACITOR
WHELAN, MV
PHILIPS RESEARCH REPORTS, 1975, 30 (04): : 262 - 264
[47] MINORITY-CARRIER EXCLUSION
MANIFACIER, JC
HENISCH, HK
SOLID-STATE ELECTRONICS, 1979, 22 (03) : 279 - 281
[48] DETERMINATION OF MINORITY-CARRIER LIFETIME USING MIS TUNNEL-DIODES
KAR, S
APPLIED PHYSICS LETTERS, 1974, 25 (10) : 587 - 589
[49] MINORITY-CARRIER INDUCED MODULATION NOISE IN MIS TUNNEL-DIODES
VIKTOROVITCH, P
SOLID-STATE ELECTRONICS, 1979, 22 (04) : 379 - 383
[50] THE POTENTIAL BARRIER HEIGHT OF MINORITY-CARRIER MIS TUNNEL-DIODES
SHOUSHA, AHM
ELKOSHEIRY, MA
SOLID STATE COMMUNICATIONS, 1980, 35 (01) : 45 - 48

← 1 2 3 4 5 →